In　this　paper,　we　demonstrate　the　fabrication　of　ZnO-based　thin-film　transistors　(TFTs)　on　flexible　substrates　(polyethylene　terephthalate)　through　radio-frequency　sputtering　and　low-temperature　procedure.　The　device　structure　belongs　to　bottom-gate　type　TFTs　where　ZnO　and　HfO2　are　used　as　channel　and　gate　dielectric　layer,　respectively.　XRD　results　show　that　the　ZnO　channel　layers　are　hexagonal　wurtzite　structure　with　(002)　orientation.　The　properties　of　the　fabricated　devices　are　also　characterized　within　several　environmental　and　physics　conditions.　It　can　be　found　that　the　flexible　TFT　device　is　with　a　low　operating　voltage　and　high　current　ON/OFF　ratio;　the　gate　leakage　current　and　transparency　are　found　to　be　similar　to　12　nA　and　75%,　respectively.　The　gate　leakage　current　(I-G),　drain-source　current　(I-DS),　ON/OFF　current　ratio　(I-ON/OFF),　threshold　voltage　(V-th),　and　field-effect　mobility　(mu(FE))　are　measured　under　different　bending　modes.