In　this　article,　the　tunable　Zn-doped　Ga2O3　films　were　obtained　by　introducing　ZnO　intercalation　during　the　film　deposition　using　plasma-enhanced　atomic　layer　deposition　(PEALD).　The　effect　of　the　ZnO　cycle　ratio　on　the　performance　of　solar-blind　photodetectors　(PDs)　was　first　analyzed.　Compared　to　the　pure　Ga2O3,　an　obviously　enhanced　performance　of　Zn-doped　Ga2O3　films　PDs　was　observed　by　the　introduction　of　Zn　dopants,　especially　photocurrent　or　responsivity,　even　if　the　light　intensity　is　low.　A　high　sensitivity　of　Zn-doped　Ga2O3　PD　has　been　achieved　with　superior　photoelectric　characteristics　for　an　extremely　low　dark　current　of　2.22　×　10-13　A,　an　ultrahigh　light　ON/　OFF　current　ratio　of　2.89　×　106,　and　a　satisfactory　responsivity　of　104　mA/W　when　the　ZnO　cycle　ratio　is　5%.　The　above　excellent　results　imply　that　the　Zn-doped　Ga2O3　PD　can　be　greatly　beneficial　to　the　application　in　deep-ultraviolet　(DUV)　detection.　　©　1963-2012　IEEE.