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author：

Du, Zaifa (Du, Zaifa.) [1] | Sun, Jie (Sun, Jie.) [2] | Feng, Hongjuan (Feng, Hongjuan.) [3] | Tang, Penghao (Tang, Penghao.) [4] | Guo, Weiling (Guo, Weiling.) [5] | Han, Kai (Han, Kai.) [6] | Chen, Enguo (Chen, Enguo.) [7] | Guo, Tailiang (Guo, Tailiang.) [8] | Song, Jibin (Song, Jibin.) [9] | Yan, Qun (Yan, Qun.) [10]

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EI

Abstract：

The　external　quantum　efficiency　(EQE)　enhancement　of　different　sized　GaN　micro-light-emitting　diodes　(μLEDs)　by　using　localized　surface　plasmons　(LSPs)　have　been　studied.　Silver　nanoparticles　(Ag　NPs)　are　attached　to　the　sidewalls　of　μLEDs　by　spin-coating　so　as　to　be　effectively　coupled　with　the　multiple　quantum　well　(MQW)　of　μLEDs　and　generate　the　LSPs.　In　the　μLEDs　with　20　×　20　μm2　large　mesas,　the　LSPs　can　effectively　inhibit　the　efficiency　droop.　Compared　to　the　μLED　samples　without　the　LSPs　coupling,　the　EQE　has　been　enhanced　by　about　8%　at　a　high　current　density　of　20,000　A/cm2.　This　work　confirms　the　effectiveness　of　the　LSPs　technology　in　improving　the　μLED　performances,　which　is　originally　practiced　only　on　the　basal　faces　of　conventional　LEDs.　©　The　Author(s),　under　exclusive　licence　to　Springer-Verlag　GmbH　Germany,　part　of　Springer　Nature　2024.

Keyword：

Gallium nitride III-V semiconductors Light emitting diodes Quantum efficiency Semiconductor quantum wells Silver nanoparticles Surface plasmons

Community：

  • [ 1 ] [Du, Zaifa]School of Physics and Electronic Information, Weifang University, Weifang; 261061, China
  • [ 2 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 3 ] [Sun, Jie]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg; 41296, Sweden
  • [ 4 ] [Feng, Hongjuan]MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Tang, Penghao]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Han, Kai]School of Physics and Electronic Information, Weifang University, Weifang; 261061, China
  • [ 8 ] [Chen, Enguo]College of Physics and Information Engineering, Fuzhou University, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 9 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Song, Jibin]MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source ：

Applied Physics B: Lasers and Optics

ISSN： 0946-2171

Year： 2024

Issue： 3

Volume： 130

2 . 0 0 0

JCR@2023

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

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