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author：

Lian, W. (Lian, W..) [1] | Tu, D. (Tu, D..) [2] | Weng, X. (Weng, X..) [3] | Yang, K. (Yang, K..) [4] | Li, F. (Li, F..) [5] | Huang, D. (Huang, D..) [6] | Zhu, H. (Zhu, H..) [7] | Xie, Z. (Xie, Z..) [8] | Chen, X. (Chen, X..) [9]

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Abstract：

Highly　efficient　near-infrared　(NIR)　luminescent　nanomaterials　are　urgently　required　for　portable　mini　or　micro　phosphors-converted　light-emitting　diodes　(pc-LEDs).　However,　most　existing　NIR-emitting　phosphors　are　generally　restricted　by　their　low　photoluminescence　(PL)　quantum　yield　(QY)　or　large　particle　size.　Herein,　a　kind　of　highly　efficient　NIR　nanophosphors　is　developed　based　on　copper　indium　selenide　quantum　dots　(CISe　QDs).　The　PL　peak　of　these　QDs　can　be　exquisitely　manipulated　from　750　to　1150 nm　by　altering　the　stoichiometry　of　Cu/In　and　doping　with　Zn2+.　Their　absolute　PLQY　can　be　significantly　improved　from　28.6%　to　92.8%　via　coating　a　ZnSe　shell.　By　combining　the　phosphors　with　a　commercial　blue　chip,　an　NIR　pc-LED　is　fabricated　with　remarkable　photostability　and　a　record-high　radiant　flux　of　88.7　mW@350 mA　among　the　Pb/Cd-free　QDs-based　NIR　pc-LEDs.　Particularly,　such　QDs-based　nanophosphors　acted　as　excellent　luminescence　converter　for　NIR　micro-LEDs　with　microarray　diameters　below　5 µm,　which　significantly　exceeds　the　resolutions　of　current　commercial　inkjet　display　pixels.　The　findings　may　open　new　avenues　for　the　exploration　of　highly　efficient　NIR　micro-LEDs　in　a　variety　of　applications.　©　2023　Wiley-VCH　GmbH.

Keyword：

CuInSe2 light emitting diode near-infrared phosphors quantum dots

Community：

  • [ 1 ] [Lian W.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 2 ] [Lian W.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 3 ] [Tu D.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 4 ] [Tu D.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Tu D.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Weng X.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Yang K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Li F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Huang D.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 10 ] [Zhu H.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 11 ] [Zhu H.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 12 ] [Xie Z.]College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fujian, Fuzhou, 350002, China
  • [ 13 ] [Chen X.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 14 ] [Chen X.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 15 ] [Chen X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China

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Advanced Materials

ISSN： 0935-9648

Year： 2024

Issue： 9

Volume： 36

2 7 . 4 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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