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author:

Lian, W. (Lian, W..) [1] | Tu, D. (Tu, D..) [2] | Weng, X. (Weng, X..) [3] | Yang, K. (Yang, K..) [4] | Li, F. (Li, F..) [5] | Huang, D. (Huang, D..) [6] | Zhu, H. (Zhu, H..) [7] | Xie, Z. (Xie, Z..) [8] | Chen, X. (Chen, X..) [9]

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Scopus

Abstract:

Highly efficient near-infrared (NIR) luminescent nanomaterials are urgently required for portable mini or micro phosphors-converted light-emitting diodes (pc-LEDs). However, most existing NIR-emitting phosphors are generally restricted by their low photoluminescence (PL) quantum yield (QY) or large particle size. Herein, a kind of highly efficient NIR nanophosphors is developed based on copper indium selenide quantum dots (CISe QDs). The PL peak of these QDs can be exquisitely manipulated from 750 to 1150 nm by altering the stoichiometry of Cu/In and doping with Zn2+. Their absolute PLQY can be significantly improved from 28.6% to 92.8% via coating a ZnSe shell. By combining the phosphors with a commercial blue chip, an NIR pc-LED is fabricated with remarkable photostability and a record-high radiant flux of 88.7 mW@350 mA among the Pb/Cd-free QDs-based NIR pc-LEDs. Particularly, such QDs-based nanophosphors acted as excellent luminescence converter for NIR micro-LEDs with microarray diameters below 5 µm, which significantly exceeds the resolutions of current commercial inkjet display pixels. The findings may open new avenues for the exploration of highly efficient NIR micro-LEDs in a variety of applications. © 2023 Wiley-VCH GmbH.

Keyword:

CuInSe2 light emitting diode near-infrared phosphors quantum dots

Community:

  • [ 1 ] [Lian W.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 2 ] [Lian W.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 3 ] [Tu D.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 4 ] [Tu D.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Tu D.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Weng X.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Yang K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Li F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Huang D.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 10 ] [Zhu H.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 11 ] [Zhu H.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 12 ] [Xie Z.]College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fujian, Fuzhou, 350002, China
  • [ 13 ] [Chen X.]CAS Key Laboratory of Design and Assembly of Functional Nanostructures, State Key Laboratory of Structural Chemistry, and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou, 350002, China
  • [ 14 ] [Chen X.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 15 ] [Chen X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China

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Source :

Advanced Materials

ISSN: 0935-9648

Year: 2024

Issue: 9

Volume: 36

2 7 . 4 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 1

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