Memristors　are　essential　components　of　neuromorphic　systems　that　mimic　the　synaptic　plasticity　observed　in　biological　neurons.　In　this　study,　a　novel　approach　employing　one-dimensional　covalent　organic　framework　(1D　COF)　films　was　explored　to　enhance　the　performance　of　memristors.　The　unique　structural　and　electronic　properties　of　two　1D　COF　films　(COF-4,4　＇-methylenedianiline　(MDA)　and　COF-4,4　＇-oxydianiline　(ODA))　offer　advantages　for　multilevel　resistive　switching,　which　is　a　key　feature　in　neuromorphic　computing　applications.　By　further　introducing　a　TiO2　layer　on　the　COF-ODA　film,　a　built-in　electric　field　between　the　COF-TiO2　interfaces　could　be　generated,　demonstrating　the　feasibility　of　utilizing　COFs　as　a　platform　for　constructing　memristors　with　tunable　resistive　states.　The　1D　nanochannels　of　these　COF　structures　contributed　to　the　efficient　modulation　of　electrical　conductance,　enabling　precise　control　over　synaptic　weights　in　neuromorphic　circuits.　This　study　also　investigated　the　potential　of　these　COF-based　memristors　to　achieve　energy-efficient　and　high-density　memory　devices.　The　unique　structural　and　electronic　properties　of　two　one-dimensional　(1D)　covalent　organic　frameworks　(COFs),　namely　COF-MDA　and　COF-ODA,　were　rationally　designed　to　assess　their　capabilities　in　multilevel　memory　devices.　This　study　further　explored　the　potential　of　these　COF-based　memristors　in　realizing　energy-efficient　and　high-density　memory　devices,　and　also　showcased　their　potential　for　neuromorphic　applications　for　the　first　time.　image