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author:

Zhou, Pan-Ke (Zhou, Pan-Ke.) [1] | Yu, Hongling (Yu, Hongling.) [2] | Huang, Weiguo (Huang, Weiguo.) [3] | Chee, Mun Yin (Chee, Mun Yin.) [4] | Wu, Shuo (Wu, Shuo.) [5] | Zeng, Tao (Zeng, Tao.) [6] | Lim, Gerard Joseph (Lim, Gerard Joseph.) [7] | Xu, Hong (Xu, Hong.) [8] | Yu, Zhiyang (Yu, Zhiyang.) [9] (Scholars:喻志阳) | Li, Haohong (Li, Haohong.) [10] (Scholars:李浩宏) | Lew, Wen Siang (Lew, Wen Siang.) [11] | Chen, Xiong (Chen, Xiong.) [12] (Scholars:陈雄)

Indexed by:

EI Scopus SCIE

Abstract:

Covalent organic polymers (COPs) memristors with multilevel memory behavior in harsh environments and photoelectric regulation are crucial for high-density storage and high-efficiency neuromorphic computing. Here, a donor-acceptor (D-A)-type COP film (Py-COP-3), which is initiated by keto-enol tautomerism, is proposed for high-performance memristors. Satisfactorily, the indium tin oxide (ITO)/Py-COP-3/Ag device demonstrates multilevel memory performance, even in high temperatures, acid-base corrosion, and various organic solvents. Moreover, the performance can be modulated by the photoelectric effect to maintain a great switching behavior. By contrast, Py-COP-0, with similar structure and chemical composition to Py-COP-3 but without keto-enol tautomerism, exhibits binary storage performance. Further studies unravel that both the formation of conductive filaments and charge transfer within D-A Py-COP-3 film contribute to the resistive switching behavior of memory devices. Py-COP-n (n = 0, 3) films are rationally designed for realizing efficient multilevel memory devices in harsh environments by adjusting the content of & beta;-ketoenamine moieties readily. Moreover, the fabricated indium tin oxide/Py-COP-3/Ag memory device can be modulated by the photoelectric effect to maintain a great switching behavior.image

Keyword:

covalent organic polymers harsh environments keto-enol tautomerism memristors resistive random access memory

Community:

  • [ 1 ] [Zhou, Pan-Ke]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Yu, Hongling]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Yu, Zhiyang]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Li, Haohong]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Chen, Xiong]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Huang, Weiguo]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, 155 Yangqiao West Rd, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Chee, Mun Yin]Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
  • [ 8 ] [Wu, Shuo]Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
  • [ 9 ] [Lim, Gerard Joseph]Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
  • [ 10 ] [Lew, Wen Siang]Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
  • [ 11 ] [Zeng, Tao]Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
  • [ 12 ] [Xu, Hong]Tsinghua Univ, Inst Nucl & New Energy Technol, Beijing 100084, Peoples R China

Reprint 's Address:

  • [Chen, Xiong]Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China;;[Lew, Wen Siang]Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore;;

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2023

Issue: 1

Volume: 34

1 8 . 5

JCR@2023

1 8 . 5 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 41

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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