In　recent　years,　Ga2O3　solar-blind　photodetectors　(SBPDs)　have　received　great　attention　for　their　potential　applications　in　civil　and　military　exploration.　In　this　work,　we　reported　the　epitaxial　growth　of　beta-Ga2O3　thin　films　on　c-plane　sapphire　using　gallium　(Ga)　and　oxygen　(O-2)　as　source　precursors.　Compared　with　traditional　solar-blind-ultraviolet　photodetector　based　on　beta-Ga2O3　film,　the　prepared　solar-blind-ultraviolet　photodetector　exhibits　a　higher　photo-responsivity　of　75.4　A/W,　a　larger　on/off　ratio　(I-245　nm,　I-light/I-dark　similar　to　10(3)),　and　a　faster　response　speed　with　an　arises　time　of　0.29　s　and　a　decay　time　of　0.31　s　at　20　V.　The　detection　rate　is　5.9　x　10(11)　Jones.　This　work　is　of　theoretical　and　practical　significance　for　the　development　of　high-wavelength　deep　ultraviolet　photodetectors　and　provides　a　reference　idea　for　the　future　realization　of　energy-efficient　photodetectors　with　low-cost　fabrication.