Wide　band　gap　semiconductor　beta-Ga2O3　thin　film　is　widely　used　in　photodetectors.　Along　the　beta-Ga2O3　[102]　direction,　the　lattice　mismatch　between　((2)　over　bar　01)　beta-Ga2O3　and　(111)　SrTiO3　(STO)　is　approximately　2.4　%.　STO　can　be　used　as　a　substrate　for　heterostructure　fabrication.　Here,　taking　advantage　of　the　symmetry　and　interatomic　super-cellular　matching　between　beta-Ga2O3　and　the　STO　substrate,　beta-Ga2O3　epitaxial　films　were　cultivated　on　STO　(111)　substrates　via　an　LPCVD　technique.　Photoconductive　solar　blind　ultraviolet　(UV)　detectors　have　been　fabricated　based　on　cultivated　Ga2O3　thin　films,　and　the　intrinsic　linkage　of　the　detector　performance　with　temperature　variation　has　been　analyzed　in　detail.　The　composition,　surface　morphology　and　electrical　properties　of　the　films　were　characterized.　The　optimized　device　showed　a　response　rate　of　66.64　A/W.　The　fast　rise　time　(tau(r1)/tau(r2))　and　decay　time　(tau(d1)/tau(d2))　at　20　V　bias　were　0.15　s/0.18　s　and　0.20　s/0.25　s,　respectively,　with　the　detectivity　of　4.1x10(12)　Jones.