In　the　field　of　active‐matrix　organic　light　emitting　display　(AMOLED),　large‐size　and　ultra‐high‐definition　AMOLED　applications　have　escalated　the　demand　for　the　integration　density　of　driver　chips.　However,　as　Moore＇s　Law　approaches　the　limit,　the　traditional　technology　of　improving　integration　density　that　relies　on　scaling　down　device　dimension　is　facing　a　huge　challenge.　Thus,　developing　a　multifunctional　and　highly　integrated　device　is　a　promising　route　for　improving　the　integration　density　of　pixel　circuits.　Here,　a　novel　nonvolatile　memory　ferroelectric　organic　light‐emitting　transistor　(Fe‐OLET)　device　which　integrates　the　switching　capability,　light‐emitting　capability　and　nonvolatile　memory　function　into　a　single　device　is　reported.　The　nonvolatile　memory　function　of　Fe‐OLET　is　achieved　through　the　remnant　polarization　property　of　ferroelectric　polymer,　enabling　the　device　to　maintain　light　emission　at　zero　gate　bias.　The　reliable　nonvolatile　memory　operations　are　also　demonstrated.　The　proof‐of‐concept　device　optimized　through　interfacial　modification　approach　exhibits　20　times　improved　field‐effect　mobility　and　five　times　increased　luminance.　The　integration　of　nonvolatile　memory,　switching　and　light‐emitting　capabilities　within　Fe‐OLET　provides　a　promising　internal‐storage‐driving　paradigm,　thus　creating　a　new　pathway　for　deploying　storage　capacitor‐free　circuitry　to　improve　the　pixel　aperture　ratio　and　the　integration　density　of　circuits　toward　the　on‐chip　advanced　display　applications.