• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Zong, Lu-Lu (Zong, Lu-Lu.) [1] | Song, Kai-Yue (Song, Kai-Yue.) [2] | Zhou, Pan-Ke (Zhou, Pan-Ke.) [3] | Yang, Zhen-Cong (Yang, Zhen-Cong.) [4] | Zheng, Shou-Tian (Zheng, Shou-Tian.) [5] (Scholars:郑寿添) | Li, Hao-Hong (Li, Hao-Hong.) [6] (Scholars:李浩宏) | Chen, Zhi-Rong (Chen, Zhi-Rong.) [7] (Scholars:陈之荣)

Indexed by:

EI SCIE

Abstract:

The searching for new memory that can work under harsh conditions will be significant for their application in some important fields such as geothermal, oil and aerospace industries. In this work, memory devices with simple sandwich structures using the g-C3N4 treated by different concentration acids as active layers have been fabricated, which exhibit non-volatile behaviors and bipolar switching characteristics. Protonation treatment can enhance the memory performance efficiently compared with un-protonized device. Among them, the device containing g-C3N4 treated with 8 M HCl presents the best resistive switching performance with ON/OFF ratio of 104 and good retention capability, which might be relative to its texture without violent tortuosity. In addition, the protonated g-C3N4-based memory devices exhibit good environmental robustness, including temperature and ionizing irradiation. Specially, its high tolerant temperature (454 ?) can also be assisted by doping BN for heat dissipation. Their good thermal/irradiating stabilities are assigned to the strong bond energy of C=N double bonds localized pi-conjugated tri-s-triazine rings. In all, the facial protonation treatment without any functionalization or supporting, the simple sandwich device structure and good environmental robustness endow their promising applications in aerospace and outdoor environment. (c) 2022 Elsevier B.V. All rights reserved.

Keyword:

Environmental robustness Nonvolatile memories Protonated g-C3N4 Resistive switching mechanism

Community:

  • [ 1 ] [Zong, Lu-Lu]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Song, Kai-Yue]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Zhou, Pan-Ke]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Yang, Zhen-Cong]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Zheng, Shou-Tian]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Li, Hao-Hong]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Chen, Zhi-Rong]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Li, Hao-Hong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Chen, Zhi-Rong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China

Reprint 's Address:

Show more details

Related Keywords:

Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2022

Volume: 905

6 . 2

JCR@2022

5 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 12

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

Online/Total:221/10027933
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1