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author:

Feng, Haopeng (Feng, Haopeng.) [1] | Wen, Huajin (Wen, Huajin.) [2] | Huang, Yanli (Huang, Yanli.) [3] | Wu, Bo (Wu, Bo.) [4] | Wu, Wenjuan (Wu, Wenjuan.) [5] | Wu, Xiao (Wu, Xiao.) [6] (Scholars:吴啸) | Gao, Min (Gao, Min.) [7] (Scholars:高旻) | Lin, Tengfei (Lin, Tengfei.) [8] (Scholars:林腾飞) | Lin, Cong (Lin, Cong.) [9] (Scholars:林枞) | Zhao, Chunlin (Zhao, Chunlin.) [10] (Scholars:赵纯林)

Indexed by:

EI Scopus SCIE

Abstract:

A small electrocaloric effect (ECE) is usually observed in aliovalent doped ferroelectric ceramics since decreased polarization is usually present. In this work, the high ECE is achieved in a barium titanate [BaTiO 3 (BT)]-based ceramic by introducing defect polarization to enhance the ferroelectric polarization and polarization change. The defect dipoles consisting of donor ion and barium vacancy, or barium and oxygen vacancies were formed in samarium-doped (Ba 1- 1.5 x Sm x )TiO 3 ceramics. The phase and defect structures, and dielectric and ferroelectric properties are analyzed to confirm the evolution of charge compensation states and defect structures, and the influences of defects on polarization rotation and ECE. An enhanced ferroelectric polarization and high internal bias field are present in the ceramic with a suitable defect dipole effect, leading to a high polarization change before/after applying an electric field, causing an enhanced ECE. Finally, a high electrocaloric temperature change of -1.11 K and a large electrocaloric strength of -0.037 K & sdot; cm kV -1 were achieved under a low electric field of 30 kV/cm, indicating that forming suitable defect dipoles can optimize the ECE. This work provides a significant paradigm for tuning ECE in ferroelectric materials via defect regulation.

Keyword:

BT-based ferroelectric ceramics Defect regulation Enhanced ferroelectricity High electrocaloric effect

Community:

  • [ 1 ] [Feng, Haopeng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wen, Huajin]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Wu, Xiao]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Gao, Min]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lin, Tengfei]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Lin, Cong]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Zhao, Chunlin]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Huang, Yanli]Fujian Normal Univ, Coll Photon & Elect Engn, Fuzhou 350117, Peoples R China
  • [ 9 ] [Wu, Bo]Southwest Minzu Univ, Phys Dept, Chengdu 610041, Peoples R China
  • [ 10 ] [Wu, Wenjuan]Chengdu Univ Informat Technol, Sichuan Prov Key Lab Informat Mat & Devices Applic, Chengdu 610225, Peoples R China

Reprint 's Address:

  • 赵纯林

    [Zhao, Chunlin]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2024

Volume: 989

5 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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