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Abstract：
Amorphous Ga2O3 thin films were deposited on SiO2 and sapphire substrates by pulsed magnetron sputtering (PSD) at room temperature, respectively. Corresponding amorphous Ga2O3 thin film photodetectors were prepared. The oxygen vacancies and defects of the interface between films and substrates were found to determine the discrepancy by comparing the performance between these two photodetectors. Amorphous Ga2O3 photodetectors on SiO2 had highly performances with a responsivity of 417 A/W, detectivity of 7.84 × 1012 Jones, and external quantum efficiency of 2.01 × 105 %. © 2024 Elsevier Ltd
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Materials Science in Semiconductor Processing
ISSN： 1369-8001
Year： 2024
Volume： 179
4 . 2 0 0
JCR@2023
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 1
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