Zinc　oxidenanoparticles　(ZnO　NPs)　is　widely　used　as　electron　transport　layer　material　in　quantum　dot　light-emitting　diodes　(QLED)　due　to　its　high　carrier　mobility,　unique　photoelectric　properties　and　good　stability.　However,　because　ZnO　has　higher　electron　mobility　than　organic　hole　transport　materials,　the　carrier　transport　is　unbalanced.　In　addition,　ZnO　NPs　has　many　surface　defects,　which　is　easy　to　capture　electrons　or　holes,　increasing　the　probability　of　non-radiative　recombination.　To　solve　these　problems,　we　carefully　selected　an　organic　compound　diallylamine　(DAA)　doping　method　to　modify　the　surface　of　ZnO.　DAA　is　found　to　not　only　reduce　the　quenching　at　the　interface　between　ZnO　and　QD,　but　also　regulate　the　energy　level　position　to　promote　the　carrier　injection　balance　of　QLED　devices.　Compared　with　control　ZnO　QLED,　the　external　quantum　efficiency　(EQE)　of　the　red　QLED　with　DAA-modified　ZnO　NPs　is　significantly　improved,　the　peakEQE　of　the　devices　increased　by　21%　from　18.8%　to　23.6%.　respectively.　It　is　a　simple　and　economical　solution　for　manufacturing　high-performance　QLED.　©　2013　IEEE.