Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method - Details

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Earlier　researchers　have　designed　nanostructures　such　as　stripe　gratings　(SG)　or　photonic　crystals　array　(PhCA)　to　improve　the　light　extraction　efficiency　(LEE)　of　light-emitting　diodes　(LEDs)　by　the　diffraction　mechanism.　However,　through　k-domain　method　and　simulation　analysis,　this　letter　finds　that　although　SG　perform　well　in　2D　simulation,　their　effect　drops　sharply　in　3D　space,　a　phenomenon　being　overlooked　in　the　community.　This　letter　explains　the　diffraction　mechanism　of　LEDs　with　nanostructure　in　2D　and　3D　space　through　K-domain　analysis,　and　reveals　the　inaccuracy　of　simulating　LED　with　SG　in　2D　space.　Unlike　SG,　PhCA　offers　diffraction　in　two　directions　and　may　be　more　suitable　for　LEDs.　©　1965-2012　IEEE.

Keyword：

Diffraction III-V semiconductors Light emitting diodes Nanostructures Refractive index Surface waves Three dimensional displays Vector spaces

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[ 1 ] [Xia, Tianwen]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 2 ] [Xia, Tianwen]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 3 ] [Wang, Le]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing; 100124, China
[ 4 ] [Chen, Enguo]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 5 ] [Chen, Enguo]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 6 ] [Huang, Zhonghang]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 7 ] [Huang, Zhonghang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 8 ] [Yan, Chunli]Library of Fuzhou University, Department of Information and Automation, Fuzhou; 350108, China
[ 9 ] [Wu, Dalei]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 10 ] [Wu, Dalei]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 11 ] [Yan, Q. Frank]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 12 ] [Yan, Q. Frank]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 13 ] [Sun, Jie]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
[ 14 ] [Sun, Jie]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
[ 15 ] [Sun, Jie]Chalmers University of Technology, Laboratory of Quantum Device Physics, Department of Microtechnology and Nanoscience, Gothenburg; 41296, Sweden

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Source ：

IEEE Journal of Quantum Electronics

ISSN： 0018-9197

Year： 2024

Issue： 3

Volume： 60

Page： 1-6

2 . 2 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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