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author:

Yao, Pinjing (Yao, Pinjing.) [1] | Li, Wangyang (Li, Wangyang.) [2] | Ke, Bingyuan (Ke, Bingyuan.) [3] | Chen, Lihui (Chen, Lihui.) [4] | Jian, Yijia (Jian, Yijia.) [5] | Qiao, Huawei (Qiao, Huawei.) [6] | Zhang, Huagui (Zhang, Huagui.) [7] | Yang, Hui Ying (Yang, Hui Ying.) [8] | Wang, Xinghui (Wang, Xinghui.) [9]

Indexed by:

EI CSCD

Abstract:

The application of 3D printing technology in fabricating quasi-solid-state micro-supercapacitors (MSCs) offers inherent benefits in programmable structural design and high-mass-loading electrode fabrication. Nevertheless, the absence of high-performance printable inks and the sluggish ion transport within thick electrodes present significant challenges to their practical charge storage capabilities. Here, a new NiCo2S4-based nanocomposite ink with excellent rheological properties has been successfully developed and the 3D structure of quasi-solid-state MSCs is rationally engineered through the direct-ink-writing 3D printing technology. Beneficial from the firmly anchored NiCo2S4 nanoparticles on the reduced graphene oxide (rGO) and the ordered 3D micropores, the thick electrodes with serrated architectures provide abundant reaction sites and exhibit enhanced ion transport. Consequently, the MSCs with triple-layer-serrated electrodes can deliver a high areal capacitance up to 416.7 mF cm−2. In comparison to the latticed counterparts, the areal capacitances of serrated MSCs with single-, double-, and triple-layer electrodes are amplified by 127.1%, 349.8%, and 585.9%, respectively (under 1 mA cm−2). This study offers novel insights into the cross-scale design of materials and electrode architectures for quasi-solid-state MSCs with high areal capacitance, promoting their integration into flexible and portable electronic devices. (Figure presented.). © Science China Press 2024.

Keyword:

3D printing Capacitance Cobalt compounds Electrodes Flowcharting Graphene Nickel compounds Structural design Supercapacitor

Community:

  • [ 1 ] [Yao, Pinjing]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Li, Wangyang]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Li, Wangyang]Fujian Science & amp; Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 4 ] [Li, Wangyang]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213000, China
  • [ 5 ] [Ke, Bingyuan]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Chen, Lihui]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Jian, Yijia]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Qiao, Huawei]College of Chemistry and Materials Science, Fujian Normal University, Fuzhou; 350007, China
  • [ 9 ] [Zhang, Huagui]College of Chemistry and Materials Science, Fujian Normal University, Fuzhou; 350007, China
  • [ 10 ] [Yang, Hui Ying]Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore; 487372, Singapore
  • [ 11 ] [Wang, Xinghui]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 12 ] [Wang, Xinghui]Fujian Science & amp; Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 13 ] [Wang, Xinghui]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213000, China

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Source :

Science China Materials

ISSN: 2095-8226

Year: 2024

Issue: 6

Volume: 67

Page: 1956-1964

6 . 8 0 0

JCR@2023

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WoS CC Cited Count:

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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