Solar-blind UV detector with fast response speed and an ultrahigh detectivity based on SrTiO3 (111) substrate grown β-Ga2O3 thin film - Details

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Abstract：

Wide　band　gap　semiconductor　β-Ga2O3　thin　film　is　widely　used　in　photodetectors.　Along　the　β-Ga2O3　[102]　direction,　the　lattice　mismatch　between　(2‾　01)　β-Ga2O3　and　(111)　SrTiO3　(STO)　is　approximately　2.4　%.　STO　can　be　used　as　a　substrate　for　heterostructure　fabrication.　Here,　taking　advantage　of　the　symmetry　and　interatomic　super-cellular　matching　between　β-Ga2O3　and　the　STO　substrate,　β-Ga2O3　epitaxial　films　were　cultivated　on　STO　(111)　substrates　via　an　LPCVD　technique.　Photoconductive　solar　blind　ultraviolet　(UV)　detectors　have　been　fabricated　based　on　cultivated　Ga2O3　thin　films,　and　the　intrinsic　linkage　of　the　detector　performance　with　temperature　variation　has　been　analyzed　in　detail.　The　composition,　surface　morphology　and　electrical　properties　of　the　films　were　characterized.　The　optimized　device　showed　a　response　rate　of　66.64　A/W.　The　fast　rise　time　(τr1/τr2)　and　decay　time　(τd1/τd2)　at　20　V　bias　were　0.15　s/0.18　s　and　0.20　s/0.25　s,　respectively,　with　the　detectivity　of　4.1x1012　Jones.　©　2024　Elsevier　Ltd

Keyword：

Energy gap Gallium compounds Lattice mismatch Low pressure chemical vapor deposition Morphology Photodetectors Photons Strontium titanates Substrates Surface morphology Thin films Titanium compounds Wide band gap semiconductors

Community：

[ 1 ] [Chen, He]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 2 ] [Chen, He]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 3 ] [Chen, He]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
[ 4 ] [Lv, Peiwen]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 5 ] [Lv, Peiwen]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 6 ] [Peng, Kai]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
[ 7 ] [Li, Pengkun]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 8 ] [Li, Pengkun]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 9 ] [Ji, Nanzheng]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 10 ] [Ji, Nanzheng]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 11 ] [Ji, Nanzheng]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
[ 12 ] [Wang, Lilin]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 13 ] [Wang, Lilin]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 14 ] [Xue, Difei]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 15 ] [Xue, Difei]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China
[ 16 ] [Chen, Chenlong]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
[ 17 ] [Chen, Chenlong]Fujian College, University of Chinese Academy of Sciences, Fuzhou; 350002, China

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Vacuum

ISSN： 0042-207X

Year： 2024

Volume： 226

3 . 8 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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