• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Liu, S. (Liu, S..) [1] | Zhang, X. (Zhang, X..) [2] | Ren, Z. (Ren, Z..) [3] | Cai, Y. (Cai, Y..) [4] | Liu, D. (Liu, D..) [5] | Guo, T. (Guo, T..) [6] (Scholars:郭太良) | Chen, H. (Chen, H..) [7] (Scholars:陈惠鹏)

Indexed by:

Scopus

Abstract:

As reported, neuromorphic devices have been widely applied in many fields. However, there are few reports on the application of neuromorphic devices in the field of display. Intelligent displays will inevitably be a requirement for high-performance displays in the future. In order to achieve intelligent display, neuromorphic devices must be applied in low-power, high-resolution display fields. Therefore, in this work, we propose a novel global driving strategy (GDS), where the display driving circuit is developed by applying neuromorphic devices (neurons and synapses) to the circuit. It combines the advantages of neurons and synapses, achieving a low-power, high-resolution display while reducing the row circuit area in the driving circuit by half and increasing circuit integration. In addition, based on the strategy, we built a 4×4 array circuit simulation model for display. IEEE

Keyword:

Circuits display driving circuit Gray-scale intelligent display neuromorphic devices Neuromorphics Neurons Sputtering Synapses Transistors

Community:

  • [ 1 ] [Liu S.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 2 ] [Zhang X.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 3 ] [Ren Z.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 4 ] [Cai Y.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 5 ] [Liu D.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 6 ] [Guo T.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China
  • [ 7 ] [Chen H.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China

Reprint 's Address:

Email:

Show more details

Related Keywords:

Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2024

Issue: 8

Volume: 45

Page: 1-1

4 . 1 0 0

JCR@2023

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

Online/Total:1157/13865943
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1