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author:

Ren, Z. (Ren, Z..) [1] | Zhang, X. (Zhang, X..) [2] | Liu, S. (Liu, S..) [3] | Liu, D. (Liu, D..) [4] | Qin, N. (Qin, N..) [5] | Guo, T. (Guo, T..) [6] (Scholars:郭太良) | Chen, H. (Chen, H..) [7] (Scholars:陈惠鹏)

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Abstract:

Display circuits play a pivotal role in visual information interaction, but traditional 2T1C display circuits suffer from the separation of storage and computation. Neuromorphic display combines the artificial synapse and light-emitting units into the pixel circuit, empowering the display with smart interaction capability. In this work, we built a novel ambient light adaptive neuromorphic display platform (ALAND) by combining a display driver circuit with the optoelectronic synaptic transistor. The optoelectronic synaptic transistor can perform multiple conduction states under the control of light and electric stimulation, including a 4-bit optical modulation grayscale. Moreover, it can make adaptive decisions according to various ambient lights. This work provides a potentially valuable novel strategy for a more comfortable and clearer visual information interaction.  © 1963-2012 IEEE.

Keyword:

Ambient light adaptation neuromorphic display optoelectronic synaptic transistor

Community:

  • [ 1 ] [Ren Z.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Ren Z.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Zhang X.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Zhang X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Liu S.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Liu S.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 7 ] [Liu D.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Liu D.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 9 ] [Qin N.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 10 ] [Qin N.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 11 ] [Guo T.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 12 ] [Guo T.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 13 ] [Chen H.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
  • [ 14 ] [Chen H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2024

Issue: 8

Volume: 71

Page: 5146-5149

2 . 9 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

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30 Days PV: 2

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