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author:

Xu, S. (Xu, S..) [1] | Shen, C. (Shen, C..) [2] | Peng, Z. (Peng, Z..) [3] | Wu, J. (Wu, J..) [4] | Chen, Z. (Chen, Z..) [5] | Zhang, X. (Zhang, X..) [6] | Ji, N. (Ji, N..) [7] | Jian, M. (Jian, M..) [8] | Wu, M. (Wu, M..) [9] (Scholars:吴明懋) | Gao, X. (Gao, X..) [10] | Zhang, J. (Zhang, J..) [11]

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Scopus

Abstract:

Fiber-shaped electrochemical capacitors (FSECs) have garnered substantial attention to emerging portable, flexible, and wearable electronic devices. However, achieving high electronic and ionic conductivity in fiber electrodes while maintaining a large specific surface area is still a challenge for enhancing the capacitance and rapid response of FSECs. Here, we present an electric-field-assisted cold-wall plasma-enhanced chemical vapor (EFCW-PECVD) method for direct growth of vertical graphene (VG) on fiber electrodes, which is incorporated in the FSECs. The customized reactor mainly consists of two radio frequency coils: one for plasma generation and the other for substrate heating. Precise temperature control can be achieved by adjusting the conductive plates and the applied power. With induction heating, only the substrate is heated to above 500 °C within just 5 min, maintaining a low temperature in the gas phase for the growth of VG with a high quality. Using this method, VG was easily grown on metallic fibers. The VG-coated titanium fibers for FSECs exhibit an ultrahigh rate performance and quick ion transport, enabling the conversion of an alternating current signal to a direct current signal and demonstrating outstanding filtering capabilities. © 2024 American Chemical Society.

Keyword:

cold-wall method electric field fiber electrodes line-filtering capacitors vertical graphene

Community:

  • [ 1 ] [Xu S.]Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 2 ] [Xu S.]School of Materials Science and Engineering, Peking University, Beijing, 100871, China
  • [ 3 ] [Xu S.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 4 ] [Shen C.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 5 ] [Shen C.]College of Chemistry and Chemical Engineering, Ningxia University, Yinchuan, 750021, China
  • [ 6 ] [Peng Z.]School of Materials Science and Engineering, Peking University, Beijing, 100871, China
  • [ 7 ] [Wu J.]College of Engineering, Peking University, Beijing, 100871, China
  • [ 8 ] [Chen Z.]Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 9 ] [Chen Z.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 10 ] [Zhang X.]Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 11 ] [Zhang X.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 12 ] [Ji N.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 13 ] [Jian M.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 14 ] [Wu M.]Key Laboratory of Advanced Materials Technologies, International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 15 ] [Gao X.]School of Materials Science and Engineering, Peking University, Beijing, 100871, China
  • [ 16 ] [Gao X.]Beijing Graphene Institute (BGI), Beijing, 100095, China
  • [ 17 ] [Zhang J.]Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
  • [ 18 ] [Zhang J.]School of Materials Science and Engineering, Peking University, Beijing, 100871, China
  • [ 19 ] [Zhang J.]Beijing Graphene Institute (BGI), Beijing, 100095, China

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Source :

ACS Nano

ISSN: 1936-0851

Year: 2024

Issue: 35

Volume: 18

Page: 24154-24161

1 5 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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