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author：

Zhang, D. (Zhang, D..) [1] | Tao, T. (Tao, T..) [2] | Zhi, T. (Zhi, T..) [3] | Zhuang, Z. (Zhuang, Z..) [4] | Xu, F. (Xu, F..) [5] | Sang, Y. (Sang, Y..) [6] | Yu, J. (Yu, J..) [7] | Yan, Y. (Yan, Y..) [8] | Tian, K. (Tian, K..) [9] | Zhang, Z.-H. (Zhang, Z.-H..) [10] | Zhang, J. (Zhang, J..) [11] | Liu, B. (Liu, B..) [12]

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Scopus

Abstract：

The　alternating　current　(ac)-driven　GaN-based　single　contact　light-emitting　diode　(SC-LED)　has　garnered　significant　attention　due　to　its　unique　driving　technique　and　potential　applications,　especially　in　areas　where　direct　current-driven　(dc-driven)　LEDs　face　limitations.　Our　previous　research　emphasizes　the　importance　of　reducing　the　operating　voltage　of　SC-LED.　In　this　study,　we　have　developed　and　manufactured　a　novel　SC-LED　featuring　a　tunnel　junction　(TJ)　structure,　which　exhibits　a　lower　breakdown　voltage　(Vbreakdown)　compared　to　conventional　LEDs　with　an　ITO　contact　layer.　The　simulation　and　experimental　data　illustrate　a　significant　performance　gap　between　TJ　SCLED　and　ITO　SC-LED.　The　working　voltage　of　TJ　SC-LED　is　34　V,　which　is　29%　lower　than　that　of　ITO　SC-LED.　Specifically,　under　ac　power　at　80　V,　TJ　SC-LED　exhibits　a　current　of　0.94　mA　and　a　WPE　of　3.22%,　both　higher　than　the　0.77　mA　and　3.02%　values　recorded　for　the　ITO　SC-LED.　This　comparison　underscores　the　superior　per-formance　of　TJ　SC-LED　over　ITO　SC-LED.　These　findings　enhance　our　understanding　of　SC-LEDs　and　pave　the　way　for　the　advancement　of　new　driving　techniques　in　nanosized　displays.　　©　1963-2012　IEEE.

Keyword：

Alternating current (ac)-drive GaN micro-light-emitting diode (LED) tunnel junction (TJ)

Community：

  • [ 1 ] [Zhang D.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 2 ] [Tao T.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 3 ] [Zhi T.]Nanjing University of Posts and Telecommunications, College of Electronic and Optical Engineering, Nanjing, 210023, China
  • [ 4 ] [Zhuang Z.]Nanjing University, School of Integrated Circuits, Suzhou, 215163, China
  • [ 5 ] [Xu F.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 6 ] [Sang Y.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 7 ] [Yu J.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 8 ] [Yan Y.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China
  • [ 9 ] [Tian K.]Guangdong University of Technology, School of Integrated Circuits, Guangdong, Guangzhou, 510006, China
  • [ 10 ] [Zhang Z.-H.]Guangdong University of Technology, School of Integrated Circuits, Guangdong, Guangzhou, 510006, China
  • [ 11 ] [Zhang J.]Minjiang University, International Digital Economy College, Fuzhou, 350108, China
  • [ 12 ] [Zhang J.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
  • [ 13 ] [Liu B.]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing, 210093, China

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Source ：

IEEE Transactions on Electron Devices

ISSN： 0018-9383

Year： 2024

Issue： 9

Volume： 71

Page： 5546-5551

2 . 9 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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