The　alternating　current　(ac)-driven　GaN-based　single　contact　light-emitting　diode　(SC-LED)　has　garnered　significant　attention　due　to　its　unique　driving　technique　and　potential　applications,　especially　in　areas　where　direct　current-driven　(dc-driven)　LEDs　face　limitations.　Our　previous　research　emphasizes　the　importance　of　reducing　the　operating　voltage　of　SC-LED.　In　this　study,　we　have　developed　and　manufactured　a　novel　SC-LED　featuring　a　tunnel　junction　(TJ)　structure,　which　exhibits　a　lower　breakdown　voltage　(V-breakdown)　compared　to　conventional　LEDs　with　an　ITO　contact　layer.　The　simulation　and　experimental　data　illustrate　a　significant　performance　gap　between　TJ　SC-LED　and　ITO　SC-LED.　The　working　voltage　of　TJ　SC-LED　is　34　V,　which　is　29%　lower　than　that　of　ITO　SC-LED.　Specifically,　under　ac　power　at　80　V,　TJ　SC-LED　exhibits　a　current　of　0.94　mA　and　a　WPE　of　3.22%,　both　higher　than　the　0.77　mA　and　3.02%　values　recorded　for　the　ITO　SC-LED.　This　comparison　underscores　the　superior　performance　of　TJ　SC-LED　over　ITO　SC-LED.　These　findings　enhance　our　understanding　of　SC-LEDs　and　pave　the　way　for　the　advancement　of　new　driving　techniques　in　nano-sized　displays.