The　High-k/Metal-Gate　Stack　(HKMG)　technology　represents　a　seminal　advancement　in　semiconductor　fabrication,　predicated　upon　the　substitution　of　SiO2　with　high-k　dielectric　materials,　coupled　with　the　integration　of　metal　gate　materials.　This　technological　paradigm　shift　has　emerged　as　a　transformative　response　to　the　intricate　challenges　encountered　within　the　semiconductor　industry,　a　sector　perpetually　engaged　in　the　relentless　pursuit　of　diminishing　the　critical　dimensions　of　semiconductor　devices.　Issues　such　as　increased　power　leakage,　enhanced　parasitic　capacitance,　and　the　escalating　complexity　of　gate　insulators　have　impeded　the　sustainable　downscaling　of　traditional　silicon　dioxide-based　devices.　These　challenges　have　necessitated　a　comprehensive　re-evaluation　of　the　materials　and　processes　involved　in　semiconductor　manufacturing,　leading　to　the　conception　and　evolution　of　the　HKMG　technology.　This　article＇s　analysis　of　the　developmental　trajectory　of　HKMG　technology　reveals　a　progression　marked　by　the　systematic　exploration　of　alternative　high-k　dielectric　materials,　rigorous　compatibility　assessments　with　metal　gate　materials,　and　the　concurrent　refinement　of　manufacturing　processes　to　ensure　seamless　integration.　After　that,　elucidating　the　impediments　encountered　during　its　evolution　and　expounding　upon　the　corresponding　ameliorative　measures　instituted.　Looking　ahead,　ongoing　research　focusing　on　the　synthesis　of　advanced　high-k　dielectric　materials,　and　the　development　of　novel　metal　gate　materials　with　superior　compatibility　to　further　enhance　device　performance　and　functionality　makes　HKMG　technology　a　huge　prospect.　Such　advancements　are　paving　the　way　for　the　realization　of　more　powerful,　energy-efficient,　and　compact　electronic　devices.　©　Published　under　licence　by　IOP　Publishing　Ltd.