Graphene　is　well　known　for　its　excellent　physical　and　chemical　properties　and　can　be　used　in　various　fields.　Its　application　technology　has　become　an　important　direction　of　research.　In　this　study,　a　patterning　technology　of　transfer-free　graphene　is　reported,　and　graphene　transparent　electrodes　of　near-ultraviolet　light-emitting　diodes　(LEDs)　are　fabricated　accordingly.　In　the　scheme,　Ni　film　plays　the　dual　role　of　an　etching　mask　and　graphene　growth　catalyst,　realizing　the　patterning　growth　of　graphene.　An　SiO2　isolation　layer　is　deposited　between　Ni　and　the　substrate,　avoiding　the　fusing　of　the　substrate　with　Ni　by　the　high　temperature　of　graphene　growth,　which　makes　the　method　applicable　to　nominally　any　high　temperature-compatible　metal　and　semiconductor　substrates.　Both　Ni　and　SiO2　are　then　removed,　thus　directly　achieving　a　good　contact　between　graphene　and　the　substrate.　The　graphene　transparent　electrodes　fabricated　by　this　method　greatly　improves　the　performance　of　near-ultraviolet　LEDs,　which　is　even　better　than　that　of　indium　tin　oxide　(ITO)　in　the　near-ultraviolet　band　based　on　the　optical　measurement　results.　This　scheme　avoids　any　possible　damage　and　contamination　of　graphene　in　traditional　transfer　and　lithography　patterning　processes,　which　is　scalable　and　suitable　for　real　applications.　A　technology　for　the　fabrication　of　transfer-free,　patterned　graphene　on　semiconductor　or　weakly　catalytic　metal　substrate　is　presented,　and　the　graphene　transparent　electrodes　on　GaN-based　LED　with　398　nm　wavelength　is　fabricated　accordingly.