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author:

Chen, Can (Chen, Can.) [1] | Yu, Jinling (Yu, Jinling.) [2] (Scholars:俞金玲) | Kang, Chen (Kang, Chen.) [3] | Chen, Yonghai (Chen, Yonghai.) [4] | Lai, Yunfeng (Lai, Yunfeng.) [5] (Scholars:赖云锋) | Cheng, Shuying (Cheng, Shuying.) [6] (Scholars:程树英)

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Abstract:

Chiral metasurfaces with high quality factors (Q-factors) are a promising platform for achieving chiral optical responses. However, the optical properties of most metasurfaces are fixed once they are fabricated. Here, we study the effect of phase-change material Ge2Sb2Te5 (GST) on the chiral optics of a planar chiral Si metasurface driven by bound states in the continuum (BICs), as the refractive index of the phase-change material changes before and after the phase change. The planar chiral silicon metasurface is capable of generating near-unity (0.99) circular dichroism and giant (0.996) linear dichroism in the infrared region. Notably, phase-change material GST is integrated into the Z-shaped Si metasurfaces. We actively tune the dissipative loss by causing the GST to undergo a phase transition, thereby modulating the optical chirality. In addition, we numerically simulate the effect of the thickness of the phase-change layer and the embedded position on the optical response. Compared with single-functional metasurfaces, this device exhibits better flexibility and more functionalities. It is demonstrated that the optical chirality of the metasurface can be well controlled using the phase-change material GST. © 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

Keyword:

Chirality Chitin Germanium alloys Germanium compounds Light modulation Network security Phase shift Q factor measurement Silicon wafers

Community:

  • [ 1 ] [Chen, Can]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
  • [ 2 ] [Yu, Jinling]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
  • [ 3 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Kang, Chen]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
  • [ 5 ] [Chen, Yonghai]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 6 ] [Lai, Yunfeng]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou; 213164, China

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Source :

Applied Optics

ISSN: 1559-128X

Year: 2024

Issue: 29

Volume: 63

Page: 7682-7691

1 . 7 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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