The　rotating　arc　plasma　method,　based　on　its　unique　characteristics,　provides　a　simple,　efficient,　and　catalyst-free　approach　for　graphene　material　synthesis.　This　study　employs　molecular　dynamics　simulations　to　theoretically　investigate　the　detailed　growth　process　of　graphene　at　the　atomic　scale　using　plasma.　During　the　growth　process,　different　radicals　serve　as　dissociation　precursors　within　the　plasma.　Simulation　results　indicate　that　the　growth　process　of　graphene　clusters　involves　three　stages:　extension　of　carbon　clusters,　cyclization　of　carbon　chains,　and　coalescence　of　clusters　into　sheets.　Firstly,　the　precursor　concentration　affects　the　size　of　graphene　clusters;　increasing　the　precursor　concentration　enlarges　the　cluster　size　but　also　increases　the　likelihood　of　curling.　Secondly,　increasing　the　hydrogen　content　in　the　precursor　can　reduce　the　growth　rate　of　clusters,　decrease　dangling　bonds　at　the　periphery　of　clusters,　thereby　slowing　down　cluster　closure　and　maintaining　a　well-defined　sheet　structure.　Lastly,　appropriately　elevating　the　simulation　temperature　can　enhance　the　reaction　rate　during　the　simulation　process　without　altering　the　reaction　pathway.　These　research　findings　establish　the　foundation　for　understanding　the　growth　mechanism　of　graphene.