Metal-organic　frameworks　(MOFs),　characterized　by　tunable　porosity,　high　surface　area,　and　diverse　chemical　compositions,　offer　unique　prospects　for　applications　in　optoelectronic　devices.　However,　the　prevailing　research　on　thin-film　devices　utilizing　MOFs　has　predominantly　focused　on　aspects　such　as　information　storage　and　photosensitivity,　often　neglecting　the　integration　of　the　advantages　inherent　in　both　photonics　and　electronics　to　enhance　optical　memory.　This　work　demonstrates　a　light-mediated　resistive　memory　device　based　on　a　highly　oriented　porphyrin-based　MOFs　film,　in　which　the　resistance　state　of　the　memristor　is　modulated　by　light,　realizing　the　integration　of　the　perception　and　storage　of　optical　information.　The　memristor　shows　excellent　performance　with　a　wide　light　range　of　405-785　nm　and　a　persistent　photoconductivity　phenomenon　up　to　8.3　x　103　s.　Further　mechanistic　studies　have　revealed　that　the　resistive　switching　effect　in　the　memristor　is　primarily　associated　with　the　reversible　formation　and　annihilation　of　Ag　conductive　filaments.　This　work　demonstrates　a　light-mediated　resistive　memory　device　based　on　a　highly　oriented　porphyrin-based　metal-organic　frameworks　film,　in　which　the　resistance　state　of　the　memristor　is　modulated　by　light,　realizing　the　integration　of　the　perception　and　storage　of　optical　information.　The　memristor　shows　excellent　performance　with　a　wide　light　range　of　405-785　nm　and　a　persistent　photoconductivity　phenomenon　up　to　8.3　x　103　s.　image