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Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes were characterized. It was determined that the incorporation of HfO2 into RuO2 greatly improved the capacitive properties of the material. The RuO2-HfO2 electrodes showed excellent cyclic stability, with no decay in charge capability during 1000 CV cycles in acidic solution. A nominal content of 50 mol% RuO2 and 50 mol% HfO2 gave the highest specific capacitance of 789.3 F/g (RuO2). The excellent capacitive properties and stability were related to the hydrous amorphous mixed-oxides formed in the film. This work proves that high capacitive performance of RuO2-based electrode materials can be obtained by thermal decomposition, even with the retained chloride in the film. (C) 2013 The Authors. Published by Elsevier B.V.
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INTERNATIONAL FEDERATION FOR HEAT TREATMENT AND SURFACE ENGINEERING (20TH CONGRESS)
ISSN: 1875-3892
Year: 2013
Volume: 50
Page: 416-420
Language: English
Cited Count:
WoS CC Cited Count: 10
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 2