Micro　light-emitting　diode　(Micro-LED)　is　a　highly　promising　technology　in　the　field　of　new　displays,　with　the　mass　transfer　process　involved　in　its　manufacturing　process　widely　regarded　as　a　major　barrier　to　their　further　development.　This　study　adopts　laser　transfer　technology　as　the　primary　solution,　using　ablation-type　transfer　release　materials　that　improve　chip　utilization　rates　over　blister-type　release　materials.　In　addition,　measurement　of　the　laser　transfer　parameters,　inspection,　and　laser　repair　technology　are　combined　to　achieve　a　transfer　yield　of　about　100%　to　the　carrier　substrate　and　a　cumulative　transfer　displacement　of　less　than　1　mu　m　in　the　Micro-LED　inverted　chip　array.　Furthermore,　cleaning　agents　were　used　to　remove　adhesive　residue　from　the　receiving　substrate　after　transfer,　improving　the　bonding　yield　between　the　chip　and　the　thin　film　transistor　driver　circuit　board.　This　study　provides　a　feasible　solution　for　Micro-LED　mass　transfer,　which　could　boost　its　further　development　toward　commercial　application.