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author:

Zhang, Bo (Zhang, Bo.) [1] | Li, Kang (Li, Kang.) [2] | Li, Renfu (Li, Renfu.) [3] | Wang, Shoufeng (Wang, Shoufeng.) [4] | Kang, Longtian (Kang, Longtian.) [5]

Indexed by:

EI

Abstract:

Here, 1D bis(N-carboxymethyl) peryleneimide (H2PDI), 0D 1,6,7,12-tetrachloro-bis(N-carboxymethyl) peryleneimide (4Cl-H2PDI), and 2D 4Cl-H2PDI/graphene quantum dot (4Cl-H2PDI/GQD) nanostructures are synthesized and carefully analyzed. The effect of bay-/end-substitution and S-scheme heterojunction of PDI-based materials as main catalysts on the photocatalytic H2O2 evolution is first studied through the oxygen reduction reaction (ORR). Under the visible-light irradiation (> 420 nm), 4Cl-H2PDI and 4Cl-H2PDI/GQD as photocatalysts exhibit the ∼7 and ∼16 times H2O2 evolution rate than H2PDI (1059.6 vs. 2484.0 vs. 160.0 µM g−1 h−1), respectively. The systematical experiments reveal that 4Cl-H2PDI and 4Cl-H2PDI/GQD should prefer a two-step single-electron ORR process, while H2PDI may involve a 4e‒ water oxidation and one-step 2e‒ ORR process. Further experiments confirm that the bay-substitution and GQD doping of H2PDI can promote the generation, transportation, and separation of photogenerated electrons and holes, and prolong the carrier lifetime. This work provides insight into PDI-based photocatalytic H2O2 production. © 2024

Keyword:

Carrier lifetime Electrolytic reduction Heterojunctions Irradiation Oxygen Semiconductor quantum dots

Community:

  • [ 1 ] [Zhang, Bo]Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 2 ] [Zhang, Bo]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 3 ] [Zhang, Bo]College of Chemistry, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Zhang, Bo]University Chinese Academy of Science, Fujian College, Fuzhou; 350002, China
  • [ 5 ] [Li, Kang]Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 6 ] [Li, Kang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 7 ] [Li, Kang]University Chinese Academy of Science, Fujian College, Fuzhou; 350002, China
  • [ 8 ] [Li, Renfu]Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 9 ] [Li, Renfu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 10 ] [Li, Renfu]University Chinese Academy of Science, Fujian College, Fuzhou; 350002, China
  • [ 11 ] [Wang, Shoufeng]Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 12 ] [Wang, Shoufeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 13 ] [Wang, Shoufeng]College of Chemistry, Fuzhou University, Fuzhou; 350116, China
  • [ 14 ] [Wang, Shoufeng]University Chinese Academy of Science, Fujian College, Fuzhou; 350002, China
  • [ 15 ] [Kang, Longtian]Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 16 ] [Kang, Longtian]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 17 ] [Kang, Longtian]University Chinese Academy of Science, Fujian College, Fuzhou; 350002, China

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Source :

Journal of Materials Science and Technology

ISSN: 1005-0302

Year: 2025

Volume: 206

Page: 257-268

1 1 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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