Investigation of Interface-Induced Helicity-Dependent Photocurrent and High-TC Ferromagnetism in Wafer-Scale 2D Ferromagnetic Fe4GeTe2/Bi2Te3 Heterostructures - Details

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Abstract：

The　helicity-dependent　photocurrent　(HDPC)　of　Fe4GeTe2　(3,　5,　8,　10　nm)/Bi2Te3　(8　nm)　heterostructures　grown　on　sapphire　substrates　was　systematically　investigated.　It　is　revealed　that　the　HDPC　is　induced　by　the　interface　coupling　between　the　Fe4GeTe2　and　Bi2Te3　films,　and　it　is　dominated　by　the　circular　photogalvanic　effect　(CPGE)　rather　than　by　the　circular　photodrag　effect　(circular　photon　drag　effect).　As　the　tensile　strain　increases,　the　CPGE　current　decreases,　which　can　be　attributed　to　the　decrease　of　the　interface-induced　spin-orbit　coupling　with　increasing　tensile　strain.　In　addition,　it　is　demonstrated　that　by　applying　appropriate　tensile　strain,　the　5　nm　Fe4GeTe2/Bi2Te3　sample　can　be　used　to　detect　the　circular　polarization　state　of　a　light.　Finally,　Fe4GeTe2　(5,　8,　and　10　nm)/Bi2Te3　(8　nm)　heterostructures　show　a　TC　larger　than　390　K.　The　dependence　of　the　CPGE　on　the　film　thickness　of　Fe4GeTe2　is　different　from　that　of　Curie　temperature,　indicating　that　the　enhanced　exchange　interaction　induced　by　the　interface　coupling　may　be　the　dominant　mechanism　for　the　high-TC　ferromagnetism.　The　large　interface-induced　CPGE　in　the　Fe4GeTe2/Bi2Te3　suggests　that　Fe4GeTe2/Bi2Te3　heterostructures　may　provide　a　good　platform　for　designing　novel　opto-spintronic　devices.　©　2024　American　Chemical　Society.

Keyword：

2D ferromagnetic Fe4GeTe2/Bi2Te3 heterostructures circular photogalvanic effect circular polarization detection ferromagnetism interface-induced helicity-dependent photocurrent strain

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[ 1 ] [Lin Z.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Zhao R.]Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
[ 3 ] [Yu J.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Yu J.]Jiangsu Collaborative Innovation Center of Photovolatic, Science and Engineering, Changzhou University, Jiangsu, Changzhou, 213164, China
[ 5 ] [Li Q.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Xie W.]Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
[ 7 ] [Lai Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 8 ] [Chen Y.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 9 ] [Chen Y.]College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 10 ] [Nie T.]Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
[ 11 ] [Cheng S.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China

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Investigation of Interface-Induced Helicity-Dependent Photocurrent and High-T C Ferromagnetism in Wafer-Scale 2D Ferromagnetic Fe4GeTe2/Bi2Te3 Heterostructures
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Source ：

ACS Applied Materials and Interfaces

ISSN： 1944-8244

Year： 2024

Issue： 49

Volume： 16

Page： 68542-68552

8 . 5 0 0

JCR@2023

CAS Journal Grade：2

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 4

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