In　perovskite　resistive　random　access　memories　working　with　the　formation　of　iodine　vacancies　conductive　channels,　I-　ions　in　perovskite　are　migrated　toward　the　anode　and　oxidized　to　I2　molecules,　which　then　accumulated　at　the　perovskite/anode　interface　under　the　applied　positive　voltage.　However,　I-2　molecules　are　extremely　unstable　and　easy　to　sublimate　outside　the　devices.　Here,　a　crown　ether　dibenzo-24-crown-8　(DB24C8)　is　adopted　as　the　interface　layer　to　eliminate　the　sublimation　of　I-2　molecules　and　stabilize　the　storage　of　I-2　inside　the　devices.　Such　an　iodine　management　strategy　is　attributed　to　the　charge　transfer　complex　formed　between　DB24C8　and　I-2,　and　then　form　I-3-　and　regenerate　I-　ions　with　the　reaction　of　injected　electrons　under　the　applied　negative　voltage.　Besides,　DB24C8　can　also　passivate　the　defect　states　in　the　perovskite,　which　dramatically　reduces　the　high　resistance　state　current.　As　a　result,　the　optimized　device　shows　a　high　switching　ratio　(＞104),　a　long　retention　time　(＞10(4)　s),　and　large　endurance　cycles　(＞500).　More　importantly,　it　also　exhibits　excellent　reproducibility　and　stability　in　ambient　conditions.