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author:

Yang, Y. (Yang, Y..) [1] | Yang, T. (Yang, T..) [2] | Zhu, X. (Zhu, X..) [3] | Lin, C. (Lin, C..) [4] | Huang, X. (Huang, X..) [5] | Sun, J. (Sun, J..) [6] (Scholars:孙捷) | Yan, C. (Yan, C..) [7] | Yan, Q. (Yan, Q..) [8]

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Abstract:

Micro-light-emitting diode (Micro-LED) is increasingly favored due to their significant advantages in the performance of emerging augmented reality (AR) or virtual reality (VR) displays. A key process of single-chip integration technology in high-density micro displays is the interconnection process, which is closely related to the quality of display devices. The traditional chip interconnection is mainly achieved by preparing metal-based bump, which requires metal evaporation after photolithography, increases the process flow complexity, and poses a risk of photoresist peeling off. To solve these problems, we use a new type of photosensitive conductive polymer material to prepare bump that has conductivity and can directly interconnect chips vertically. Therefore, this method can eliminate the process of metal evaporation and reduce experimental risks. The results indicate that by optimizing the process parameters, bumps with high uniformity can be successfully prepared. This material can simplify the process flow and improve the success of subsequent vertical interconnection steps. © 2024 IEEE.

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  • [ 1 ] [Yang Y.]College of Physics and Information Engineering, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350100, China
  • [ 2 ] [Yang T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Zhu X.]College of Physics and Information Engineering, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350100, China
  • [ 4 ] [Lin C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Huang X.]College of Physics and Information Engineering, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350100, China
  • [ 6 ] [Sun J.]College of Physics and Information Engineering, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350100, China
  • [ 7 ] [Sun J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 8 ] [Sun J.]Chalmers University of Technology, Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Gothenburg, 41296, Sweden
  • [ 9 ] [Yan C.]Library of Fuzhou University, Department of Information and Automation, Fuzhou, 350108, China
  • [ 10 ] [Yan Q.]College of Physics and Information Engineering, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350100, China
  • [ 11 ] [Yan Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

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Year: 2024

Page: 30-33

Language: English

Cited Count:

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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