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author:

Tian, Zhiqiang (Tian, Zhiqiang.) [1] | Zhang, Gang (Zhang, Gang.) [2] | Huang, Yuhua (Huang, Yuhua.) [3] | Wang, Shizhao (Wang, Shizhao.) [4] | Liu, Sheng (Liu, Sheng.) [5]

Indexed by:

EI

Abstract:

The advent of 3-D NAND architecture has introduced new integration challenges, particularly regarding the impact of thermal-mechanical stress during manufacturing, which significantly affects device performance. This study establishes a 3-D NAND flash memory process mechanics model using a local representative volume element (RVE) finite element modeling framework. We thoroughly analyze the causes of warpage during the 3-D NAND manufacturing process and monitor the evolution of mechanical stress and related structural deformations. Additionally, we examine the deformation distribution under sequential processes and investigate how different process conditions impact asymmetric deformation. Our findings have potential significance for improving device structure reliability and optimizing process parameters in 3-D NAND memory manufacturing. By providing insights into stress evolution and deformation mechanisms, this work contributes to addressing the challenges associated with increasing storage density in 3-D NAND technology. © 1963-2012 IEEE.

Keyword:

Flash memory NAND circuits Residual stresses Stress analysis

Community:

  • [ 1 ] [Tian, Zhiqiang]Wuhan University, School of Power and Mechanical Engineering, Wuhan; 430072, China
  • [ 2 ] [Zhang, Gang]Yangtze Memory Technologies Company Ltd. (YMTC), Wuhan; 430205, China
  • [ 3 ] [Huang, Yuhua]Fuzhou University, School of Mechanical Engineering and Automation, Fuzhou; 350116, China
  • [ 4 ] [Wang, Shizhao]Wuhan University, School of Power and Mechanical Engineering, Wuhan; 430072, China
  • [ 5 ] [Liu, Sheng]Wuhan University, School of Power and Mechanical Engineering, The Institute of Technological Sciences, Wuhan; 430072, China

Reprint 's Address:

  • [wang, shizhao]wuhan university, school of power and mechanical engineering, wuhan; 430072, china;;

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2025

Issue: 1

Volume: 72

Page: 193-198

2 . 9 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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