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Abstract：
The residual stresses on silicon nitride thin films that were fabricated by PECVD were studied in this paper. A wafer-curvature measurement method was used to determine the stresses of silicon nitride films. The structure of fixed-fixed beam was also developed to compare with the stress measurement. The contributions of processing parameters on the stress of silicon nitride films were analyzed.
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FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
ISSN： 0277-786X
Year： 2004
Volume： 5774
Page： 212-215
Language： English
Cited Count：
SCOPUS Cited Count： 1
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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