Optoelectronic　memristors　have　garnered　significant　attention　for　their　critical　applications　in　neuromorphic　computing.　The　incorporation　of　materials　with　excellent　absorption　efficiency　in　the　fabrication　of　photoelectric　memristors　can　significantly　enhance　the　image　recognition　capabilities.　CdS　nanorods　(NRs)　are　semiconductors　with　strong　UV　light　absorption　that　can　effectively　improve　charge　transport　characteristics,　reduce　the　loss　caused　by　recombination　at　the　crystal　surface,　and　enhance　the　light　absorption　characteristics.　In　this　work,　an　efficient　hot　injection　method　for　controlling　the　growth　of　CdS　NRs　or　nanosquares　(NSs)　by　optimizing　the　proportion　of　dodecanethiol　(DDT)　is　reported.　Meanwhile,　two-terminal　optoelectronic　memristors　based　on　CdS　NSs　and　CdS　NRs　are　fabricated　in　which　the　conductance　of　the　devices　can　be　continuously　modulated　under　electrical　and　optical　stimulations　of　different　widths/spacings/amplitudes.　These　advantages　impart　the　device　with　exceptional　electrical　and　optical　synaptic　functions　including　excitability,　inhibition,　paired-pulse　facilitation,　short-term/long-term　plasticity,　and　memory-forgetting　behavior.　In　addition,　the　enhancement　of　the　image　recognition　efficiency　of　the　device　by　CdS　NRs　is　demonstrated　in　experiments　with　the　recognition　of　the　optical　image　＇F＇.　This　work　offers　valuable　insights　for　material　selection　in　the　development　of　future　neuromorphic　devices.　©　2025　American　Chemical　Society.