2D　materials　exhibit　unique　properties　for　next-generation　electronics　and　quantum　devices.　However,　their　sensitivity　to　temperature　variations,　particularly　concerning　cooling-induced　strain,　remains　underexplored　systematically.　This　study　investigates　the　effects　of　cooling-induced　strain　on　monolayer　MoSe2　at　cryogenic　temperatures.　It　is　emphasized　that　the　mismatch　in　thermal　expansion　coefficients　between　the　material　and　bulk　substrate　leads　to　significant　external　strain,　which　superimposes　the　internal　strain　of　the　material.　By　engineering　the　material-substrate　2D-bulk　interface,　the　resulting　strain　conditions　are　characterized　and　reveal　that　substantial　compressive　strain　induces　new　emission　features　linked　to　direct-to-indirect　bandgap　transition,　as　confirmed　by　photoluminescence　and　transient　absorption　spectroscopy　studies.　Finally,　it　is　demonstrated　that　encapsulation　with　hexagonal　boron　nitride　can　mitigate　the　external　strain　by　2D-2D　interfaces,　achieving　results　similar　to　those　of　suspended　samples.　The　findings　address　key　challenges　in　quantifying　and　characterizing　strain　types　across　different　2D-bulk　interfaces,　distinguishing　cooling-induced　strain　effects　from　other　temperature-dependent　phenomena,　and　designing　strain-sensitive　2D　material　devices　for　extreme　temperature　conditions.