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author:

Wang, R. (Wang, R..) [1] | Wu, J. (Wu, J..) [2] | Zheng, Q. (Zheng, Q..) [3] | Deng, H. (Deng, H..) [4] | Wang, W. (Wang, W..) [5] | Chen, J. (Chen, J..) [6] | Wang, X. (Wang, X..) [7] | Wei, M. (Wei, M..) [8] | Wang, Z.-K. (Wang, Z.-K..) [9] | Cheng, S. (Cheng, S..) [10]

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Scopus

Abstract:

2D perovskite materials are ideal candidates for indoor photovoltaic (IPV) applications due to their tunable bandgap, high absorption coefficients, and enhanced stability. However, attaining uniform crystallization and overcoming low carrier mobility remain key challenges for 2D perovskites, limiting their overall performance. In this study, a 2D perovskite light-absorbing layer is constructed using a Dion–Jacobson (DJ)-phase EDA(FA)4Pb5I16 (n = 5) and introduced butylammonium iodide (BAI) for interface modification, thereby creating a novel DJ/Ruddlesden–Popper (RP) dual 2D perovskite heterostructure. By adjusting the thickness of the BAI-based perovskite layer, the relationship between interfacial defect states and carrier mobility is investigated under varying indoor light intensities. The results indicate that, by achieving a balance between interfacial defect passivation and carrier transport, the optimized 2D perovskite device reaches a power conversion efficiency (PCE) of 30.30% and an open-circuit voltage (VOC) of 936 mV under 1000 lux (3000 K LED). 2D-DJ/RP perovskite IPV exhibits a twentyfold increase in T90 lifetime compared to 3D perovskite devices. It is the first time to systematically study 2D perovskites in IPV applications, demonstrating that rationally designed and optimized 2D perovskites hold significant potential for fabricating high-performance indoor PSCs. © 2025 Wiley-VCH GmbH.

Keyword:

2D perovskite solar cells carrier transport defect passivation dual-phase 2D perovskite heterostructures indoor photovoltaic

Community:

  • [ 1 ] [Wang R.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Wang R.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 3 ] [Wu J.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Wu J.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 5 ] [Zheng Q.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Zheng Q.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 7 ] [Deng H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Deng H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 9 ] [Wang W.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Wang W.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 11 ] [Chen J.]Institute of Functional Nano & Soft Materials (FUNSOM), Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, China
  • [ 12 ] [Wang X.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 13 ] [Wang X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 14 ] [Wei M.]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fuzhou, 350116, China
  • [ 15 ] [Wang Z.-K.]Institute of Functional Nano & Soft Materials (FUNSOM), Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, China
  • [ 16 ] [Cheng S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 17 ] [Cheng S.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

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Source :

Advanced Materials

ISSN: 0935-9648

Year: 2025

2 7 . 4 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 2

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