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author:

Wang, Renjie (Wang, Renjie.) [1] | Wu, Jionghua (Wu, Jionghua.) [2] (Scholars:吴炯桦) | Zheng, Qiao (Zheng, Qiao.) [3] (Scholars:郑巧) | Deng, Hui (Deng, Hui.) [4] (Scholars:邓辉) | Wang, Weihuang (Wang, Weihuang.) [5] (Scholars:王伟煌) | Chen, Jing (Chen, Jing.) [6] | Wang, Xinghui (Wang, Xinghui.) [7] (Scholars:王星辉) | Wei, Mingdeng (Wei, Mingdeng.) [8] (Scholars:魏明灯) | Wang, Zhao-Kui (Wang, Zhao-Kui.) [9] | Cheng, Shuying (Cheng, Shuying.) [10] (Scholars:程树英)

Indexed by:

Scopus SCIE

Abstract:

2D perovskite materials are ideal candidates for indoor photovoltaic (IPV) applications due to their tunable bandgap, high absorption coefficients, and enhanced stability. However, attaining uniform crystallization and overcoming low carrier mobility remain key challenges for 2D perovskites, limiting their overall performance. In this study, a 2D perovskite light-absorbing layer is constructed using a Dion-Jacobson (DJ)-phase EDA(FA)(4)Pb5I16 (n = 5) and introduced butylammonium iodide (BAI) for interface modification, thereby creating a novel DJ/Ruddlesden-Popper (RP) dual 2D perovskite heterostructure. By adjusting the thickness of the BAI-based perovskite layer, the relationship between interfacial defect states and carrier mobility is investigated under varying indoor light intensities. The results indicate that, by achieving a balance between interfacial defect passivation and carrier transport, the optimized 2D perovskite device reaches a power conversion efficiency (PCE) of 30.30% and an open-circuit voltage (V-OC) of 936 mV under 1000 lux (3000 K LED). 2D-DJ/RP perovskite IPV exhibits a twentyfold increase in T-90 lifetime compared to 3D perovskite devices. It is the first time to systematically study 2D perovskites in IPV applications, demonstrating that rationally designed and optimized 2D perovskites hold significant potential for fabricating high-performance indoor PSCs.

Keyword:

2D perovskite solar cells carrier transport defect passivation dual-phase 2D perovskite heterostructures indoor photovoltaic

Community:

  • [ 1 ] [Wang, Renjie]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wu, Jionghua]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Zheng, Qiao]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Deng, Hui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Wang, Weihuang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Wang, Xinghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Wang, Renjie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 9 ] [Wu, Jionghua]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zheng, Qiao]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 11 ] [Deng, Hui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Wang, Weihuang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Wang, Xinghui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 14 ] [Cheng, Shuying]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 15 ] [Chen, Jing]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Lab Adv Negat Carbon Technol, Suzhou 215123, Peoples R China
  • [ 16 ] [Wang, Zhao-Kui]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Lab Adv Negat Carbon Technol, Suzhou 215123, Peoples R China
  • [ 17 ] [Wei, Mingdeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 吴炯桦 程树英

    [Wu, Jionghua]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

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Source :

ADVANCED MATERIALS

ISSN: 0935-9648

Year: 2025

Issue: 18

Volume: 37

2 7 . 4 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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