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author:

Kang, Chen (Kang, Chen.) [1] | Yu, Jinling (Yu, Jinling.) [2] | Chen, Can (Chen, Can.) [3] | Lai, Yunfeng (Lai, Yunfeng.) [4] | Cheng, Shuying (Cheng, Shuying.) [5] | Chen, Yonghai (Chen, Yonghai.) [6] | Li, Yuan (Li, Yuan.) [7] | Zhang, Jinchuan (Zhang, Jinchuan.) [8] | Liu, Fengqi (Liu, Fengqi.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

Quantum cascade lasers (QCLs) and interband cascade lasers (ICLs) are well-established and reliable sources of mid-infrared (IR) radiation. In photonic crystals, topological edge states (ESs) emerge at the boundaries between spatial domains with different topological properties. These ESs exhibit unidirectional transmission, effectively suppressing backscattering and maintaining robustness against defects and disorders. In this work, the unique attributes of topological valley photonic crystals compatible with QCLs and ICLs are investigated. The results demonstrate the topological protection offered by valley-dependent ES, which is essential for one-way optical propagation in devices and resonant cavities. Furthermore, topologically protected triangular cavities based on VPCs exhibit high quality factors and uniform energy distribution, even in the presence of structural defects. Additionally, the different characteristics of transverse electric (TE) and transverse magnetic (TM) mode resonant cavities enable the development of application-specific topological lasers, allowing for optimal performance tailored to diverse operational requirements. (c) 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

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Community:

  • [ 1 ] [Kang, Chen]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 3 ] [Chen, Can]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 4 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Peoples R China
  • [ 8 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 9 ] [Li, Yuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 10 ] [Zhang, Jinchuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 11 ] [Liu, Fengqi]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 12 ] [Chen, Yonghai]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 13 ] [Li, Yuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Zhang, Jinchuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Liu, Fengqi]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

Reprint 's Address:

  • [Li, Yuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China;;[Li, Yuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

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Source :

APPLIED OPTICS

ISSN: 1559-128X

Year: 2025

Issue: 12

Volume: 64

Page: 3122-3132

1 . 7 0 0

JCR@2023

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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