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author:

Su, Zhenyi (Su, Zhenyi.) [1] | Xie, Weihao (Xie, Weihao.) [2] | Sun, Quanzhen (Sun, Quanzhen.) [3] | Li, Yifan (Li, Yifan.) [4] | Zhong, Zhipan (Zhong, Zhipan.) [5] | Wang, Weihuang (Wang, Weihuang.) [6] | Zhang, Caixia (Zhang, Caixia.) [7] | Deng, Hui (Deng, Hui.) [8] | Cheng, Shuying (Cheng, Shuying.) [9]

Indexed by:

EI

Abstract:

The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se)2 secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state (NIT) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe2 layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%. © 2025 American Chemical Society.

Keyword:

Copper oxides Selenium compounds Tin alloys Zinc alloys

Community:

  • [ 1 ] [Su, Zhenyi]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Su, Zhenyi]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 3 ] [Xie, Weihao]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Xie, Weihao]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 5 ] [Sun, Quanzhen]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Sun, Quanzhen]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 7 ] [Li, Yifan]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Li, Yifan]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 9 ] [Zhong, Zhipan]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Zhong, Zhipan]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 11 ] [Wang, Weihuang]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 12 ] [Wang, Weihuang]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 13 ] [Zhang, Caixia]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 14 ] [Zhang, Caixia]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 15 ] [Deng, Hui]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 16 ] [Deng, Hui]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 17 ] [Cheng, Shuying]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 18 ] [Cheng, Shuying]Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 19 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213164, China

Reprint 's Address:

  • [deng, hui]fujian science &technology innovation laboratory for optoelectronic information of china, fujian, fuzhou; 350108, china;;[deng, hui]institute of micro-nano devices and solar cells, college of physics and information engineering, fuzhou university, fuzhou; 350108, china

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Source :

ACS Materials Letters

Year: 2025

Issue: 4

Volume: 7

Page: 1329-1335

9 . 9 0 0

JCR@2023

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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