Dual-Band Topological Valley Cavity in Mid-Infrared Range - Details

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Abstract：

Topological　edge　states,　emerging　at　boundaries　between　regions　with　distinct　topological　properties,　enable　unidirectional　transmission　with　robustness　against　defects　and　disorder.　However,　achieving　dual-band　operation　with　high　performance　remains　challenging.　Here,　we　integrate　dual-band　topological　edge　states　into　a　valley　photonic　crystal　cavity　operating　in　the　mid-infrared　region,　leveraging　triangular　scatterers.　A　key　contribution　of　this　work　is　the　simultaneous　realization　of　ultra-high　Q-factors　(up　to　6.1593　×　109)　and　uniform　mode　distribution　(inverse　participation　ratio　©　2025　by　the　authors.

Keyword：

Inverse problems Photonic integrated circuits Q factor measurement

Community：

[ 1 ] [Kang, Chen]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 2 ] [Yu, Jinling]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 3 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 4 ] [Chen, Can]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 5 ] [Lai, Yunfeng]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 6 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 7 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou; 213164, China
[ 8 ] [Chen, Yonghai]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 9 ] [Chen, Yonghai]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 10 ] [Li, Yuan]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 11 ] [Li, Yuan]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 12 ] [Liu, Shuman]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 13 ] [Liu, Shuman]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 14 ] [Zhang, Jinchuan]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 15 ] [Zhang, Jinchuan]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 16 ] [Liu, Fengqi]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 17 ] [Liu, Fengqi]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

Reprint 's Address：

俞金玲
[yu, jinling]institute of micro/nano devices and solar cells, school of physics and information engineering, fuzhou university, fuzhou; 350108, china;;[yu, jinling]school of advanced manufacturing, fuzhou university, quanzhou; 362251, china

Email：

jlyu@semi.ac.cnyuanli@semi.ac.cn

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