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author:

Kang, Chen (Kang, Chen.) [1] | Yu, Jinling (Yu, Jinling.) [2] | Chen, Can (Chen, Can.) [3] | Lai, Yunfeng (Lai, Yunfeng.) [4] | Cheng, Shuying (Cheng, Shuying.) [5] | Chen, Yonghai (Chen, Yonghai.) [6] | Li, Yuan (Li, Yuan.) [7] | Liu, Shuman (Liu, Shuman.) [8] | Zhang, Jinchuan (Zhang, Jinchuan.) [9] | Liu, Fengqi (Liu, Fengqi.) [10]

Indexed by:

SCIE

Abstract:

Topological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topological edge states into a valley photonic crystal cavity operating in the mid-infrared region, leveraging triangular scatterers. A key contribution of this work is the simultaneous realization of ultra-high Q-factors (up to 6.1593 x 10(9)) and uniform mode distribution (inverse participation ratio < 2) across both bands. Moreover, the dual-band cavity exhibits exceptional defect tolerance. These findings provide a promising platform for mid-infrared photonic integration, paving the way for high-performance optical cavities in multifunctional photonic systems.

Keyword:

mid-infrared range topological valley photonic crystals

Community:

  • [ 1 ] [Kang, Chen]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 3 ] [Chen, Can]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 4 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Peoples R China
  • [ 8 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 9 ] [Li, Yuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 10 ] [Liu, Shuman]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 11 ] [Zhang, Jinchuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 12 ] [Liu, Fengqi]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
  • [ 13 ] [Chen, Yonghai]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Li, Yuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Liu, Shuman]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 16 ] [Zhang, Jinchuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 17 ] [Liu, Fengqi]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

Reprint 's Address:

  • [Yu, Jinling]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China;;[Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Li, Yuan]Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China;;[Li, Yuan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

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Source :

PHOTONICS

Year: 2025

Issue: 5

Volume: 12

2 . 1 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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