A simplified and high yield method for Micro-LED integration: Substitution of metal bumps with conductive photoresist in high-precision mass transfer - Details

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Abstract：

With　the　rapid　development　of　Micro-light-emitting　diode　(Micro-LED)　technology,　its　application　in　the　display　field　is　promising.　However,　the　precise　electrical　connection　between　Micro-LEDs　and　driver　substrates　remains　a　key　challenge　to　achieve　their　large-scale　commercialization.　Conventional　metal　bump　preparation　processes　usually　rely　on　complex　lift-off　techniques,　which　not　only　increase　the　complexity　of　the　process　steps,　but　also　face　operational　risks　and　are　difficult　to　meet　the　demands　of　smaller　pixel　sizes　and　pitches.　To　this　end,　this　study　proposes　an　innovative　approach　using　photoresist　bumps　instead　of　conventional　metal　bumps　for　the　electrical　connection　between　Micro-LEDs　and　driver　substrates.　By　customized　conductive　photoresist　as　a　conductive　medium　and　combined　with　a　proven　photolithography　process,　it　is　possible　to　accurately　prepare　photoresist　bumps　to　a　predetermined　position　on　the　driver　substrate　without　the　need　for　a　complex　metal　deposition　process.　This　method　significantly　simplifies　the　tedious　steps　in　the　conventional　process　and　improves　the　preparation　efficiency　and　process　stability.　In　the　study,　we　combined　the　laser　transfer　technique　with　the　photoresist　bumping　method　to　successfully　transfer　micro-LEDs　with　a　size　of　30　×　15　μm2　from　a　sapphire　substrate　to　a　transparent　1.98-in.　low-temperature　polycrystalline　silicon　thin-film　transistors　(LTPS-TFT)　driver　substrate　with　high　precision　and　good　process　repeatability.　The　technology　simplifies　the　process　while　effectively　reducing　costs,　providing　technical　support　for　the　large-scale　production　and　commercial　application　of　Micro-LED　display　technology.　In　addition,　the　method　relies　on　mature　lithography　technology　and　has　the　advantage　of　compatibility　with　existing　semiconductor　manufacturing　processes,　which　has　a　strong　potential　for　industrial　promotion.　Although　this　study　focuses　on　the　transfer　process　of　Micro-LEDs,　the　proposed　technological　solution　also　has　a　wide　range　of　application　prospects,　especially　in　the　high-precision　transfer　and　conductive　bump　preparation　of　other　micro/nano　devices.　©　2025　The　Authors

Keyword：

Bonding Micro-LED Photoresist bump Transfer

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[ 1 ] [Lang T.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 2 ] [Zhu X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 3 ] [Lin X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 4 ] [Huang X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 5 ] [Xie Y.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 6 ] [Wang S.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 7 ] [Bai S.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 8 ] [Tang X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 9 ] [Li J.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 10 ] [Yuan J.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 11 ] [Huang X.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 12 ] [Huang Z.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 13 ] [Lin C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
[ 14 ] [Sun J.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China
[ 15 ] [Sun J.]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden
[ 16 ] [Yan Q.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350100, China

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