Photoelectronic　transistors　had　attracted　significant　attention　in　the　field　of　neuromorphic　computing,　as　they　integrated　efficient　sensing,　memory,　and　processing　capabilities　into　a　single　device.　The　design　of　multilayer　heterostructures　offered　novel　opportunities　for　developing　multifunctional　optoelectronic　devices,　particularly　for　neuromorphic　optoelectronic　devices　that　required　integrated　non-volatile　memory　and　excellent　optical　response　characteristics.　TIPS-pentacene　films　with　High-quality　were　successfully　prepared　through　liquid　surface　growth　and　evaporation　crystallization,　and　these　films　were　further　transferred　to　target　substrates　for　heterostructure　devices.　Based　on　this　strategy,　a　CsPbBr3/PMMA/TIPS-pentacene　heterojunction　photoelectronics　transistor　was　developed　to　overcome　the　limitations　of　traditional　solution-based　strategies　for　preparing　multilayer　structures.　Owing　to　the　ultra-thin　and　high-quality　TIPS-pentacene　conductive　layer　and　its　excellent　interface　contact　with　the　underlying　film,　the　composite　transistor　demonstrated　high　electrical　properties,　including　high　mobility　and　low　subthreshold　swing.　It　exhibited　typical　synaptic　characteristics　such　as　pulse-promotion　facilitation　(PPF).　The　device　also　delivered　excellent　non-volatile　memory　characteristics,　with　multi-state　memory　windows　observed　under　different　gate　scanning　ranges.　Based　on　the　strong　gate　modulation,　the　photoelectronic　transistor　array　successfully　simulated　the　dark　and　bright　adaptation　behaviors　of　the　human　visual　system.　Therefore,　the　preparation　strategy　for　multifunctional　photoelectronic　transistors　proposed　in　this　work　provided　an　unique　perspective　for　the　next　generation　of　artificial　neural　systems.　©　2025　Elsevier　B.V.