Dual-Band Topological Valley Cavity in Mid-Infrared Range - Details

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Abstract：

Topological　edge　states,　emerging　at　boundaries　between　regions　with　distinct　topological　properties,　enable　unidirectional　transmission　with　robustness　against　defects　and　disorder.　However,　achieving　dual-band　operation　with　high　performance　remains　challenging.　Here,　we　integrate　dual-band　topological　edge　states　into　a　valley　photonic　crystal　cavity　operating　in　the　mid-infrared　region,　leveraging　triangular　scatterers.　A　key　contribution　of　this　work　is　the　simultaneous　realization　of　ultra-high　Q-factors　(up　to　6.1593　×　109)　and　uniform　mode　distribution　(inverse　participation　ratio　＜　2)　across　both　bands.　Moreover,　the　dual-band　cavity　exhibits　exceptional　defect　tolerance.　These　findings　provide　a　promising　platform　for　mid-infrared　photonic　integration,　paving　the　way　for　high-performance　optical　cavities　in　multifunctional　photonic　systems.　©　2025　by　the　authors.

Keyword：

mid-infrared range topological valley photonic crystals

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[ 1 ] [Kang C.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 2 ] [Yu J.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 3 ] [Yu J.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Chen C.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 5 ] [Lai Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Cheng S.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Cheng S.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, 213164, China
[ 8 ] [Chen Y.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 9 ] [Chen Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 10 ] [Li Y.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 11 ] [Li Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 12 ] [Liu S.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 13 ] [Liu S.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 14 ] [Zhang J.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 15 ] [Zhang J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 16 ] [Liu F.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 17 ] [Liu F.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

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Source ：

Photonics

ISSN： 2304-6732

Year： 2025

Issue： 5

Volume： 12

2 . 1 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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