Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments - Details

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Abstract：

The　tin　dioxide　(SnO2)　thin　films　in　this　work　were　prepared　by　using　plasma-enhanced　atomic　layer　deposition　(PEALD),　and　a　systematic　analysis　was　conducted　to　evaluate　the　influence　of　post-deposition　annealing　at　various　temperatures　in　a　nitrogen–hydrogen　mixed　atmosphere　on　their　surface　morphology,　optical　behavior,　and　electrical　performance.　The　SnO2　films　were　characterized　by　using　X-ray　diffraction　(XRD),　X-ray　photoelectron　spectroscopy　(XPS),　scanning　electron　microscopy　(SEM),　transmission　electron　microscopy　(TEM),　and　Hall　effect　measurements.　With　increasing　annealing　temperatures,　the　SnO2　films　exhibited　enhanced　crystallinity,　a　higher　oxygen　vacancy　(OV)　peak　area　ratio,　and　improved　mobility　and　carrier　concentration.　These　enhancements　make　the　annealed　SnO2　films　highly　suitable　as　electron　transport　layers　(ETLs)　in　perovskite　solar　cells　(PSCs),　providing　practical　guidance　for　the　design　of　high-performance　PSCs.　©　2025　by　the　authors.

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annealing ETL PEALD PSCs SnO2

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[ 1 ] [Chen Q.-Z.]Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
[ 2 ] [Zhang Z.-X.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
[ 3 ] [Zhang Z.-X.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362200, China
[ 4 ] [Fu W.-Q.]Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
[ 5 ] [Duan J.-R.]Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
[ 6 ] [Yang Y.-X.]Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
[ 7 ] [Chen C.-N.]Department of Computer Science and Information Engineering, Asia University, Taichung, 413, Taiwan
[ 8 ] [Lien S.-Y.]Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
[ 9 ] [Lien S.-Y.]Department of Computer Science and Information Engineering, Asia University, Taichung, 413, Taiwan

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Source ：

Nanomaterials

ISSN： 2079-4991

Year： 2025

Issue： 13

Volume： 15

4 . 4 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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