Subthreshold　swing　and　contact　resistance　are　key　parameters　for　scaling　transistors.　This　work　fabricated　highperformance　IGZO-based　transistors　by　incorporating　an　ITO　contact　interlayer.　The　IGZO　channel　was　in　situ　grown　using　atomic　layer　deposition　on　a　6　nm　HfLaO　gate　dielectric,　resulting　in　devices　with　outstanding　mobility　of　27　cm2/V-s.　We　systematically　investigated　the　effect　of　channel　length　on　device　performance　and　evaluated　the　role　of　the　ITO　interlayer　in　reducing　contact　resistance.　The　inclusion　of　the　ITO　interlayer　significantly　reduced　the　contact　resistance　to　165　Ω-μm.　Notably,　for　a　100　nm　channel　length,　the　transistors　exhibited　a　subthreshold　swing　of　62　mV/dec,　a　transconductance　of　351　μS/μm,　and　a　high　on-state　current　of　548.6　μA/μm　at　a　drainsource　voltage　of　1　V.　These　results　underscore　the　significant　potential　of　IGZO　transistors　for　future　three-dimensional　stacked　memory　applications,　offering　promising　performance　for　highdensity,　low-power　electronic　devices.　©　2025　IEEE.