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author:

Wang, Xiumei (Wang, Xiumei.) [1] | Li, Enlong (Li, Enlong.) [2] | Liu, Yaqian (Liu, Yaqian.) [3] | Lan, Shuqiong (Lan, Shuqiong.) [4] | Yang, Huihuang (Yang, Huihuang.) [5] | Yan, Yujie (Yan, Yujie.) [6] | Shan, Liuting (Shan, Liuting.) [7] | Lin, Zhixian (Lin, Zhixian.) [8] (Scholars:林志贤) | Chen, Huipeng (Chen, Huipeng.) [9] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良)

Indexed by:

EI SCIE

Abstract:

Stretchable organic transistors possess great potential in a variety of emerging areas such as biomedical electronics, wearable gadgets and smart skin. Here, stretchable vertical organic field effect transistor (s-VOFET) is developed for the first time, which exhibits low working voltage (-0.5 V), high current density (5.19 mA/cm2) and excellent stretching stability. More interesting, the on state current increased by 68.5% and the subthreshold swing decreased by 25.2% with the increase of the strain to 20%. It is ascribed to the enhanced face-on orientation of 7C-7C stacking in semiconductor film by stretching strain, providing more efficient pathways for vertical charge transport. Meanwhile, simulation results demonstrate that stretching strain can enhance gate field controllability to charge carriers, resulting in enhanced charge transport and accumulation. Moreover, stretchable vertical synaptic transistor (s-VST) is fabricated by replacing cross-linked PVA with ion gel, which exhibits stable synaptic characteristics even with 60% stretching strain. Noticeably, coupling triboelectric nanogenerator (TENG) and synaptic transistor leads to a new field of triboelectric, which enables the direct interactions between environmental perception data and human-machine interfacing. Therefore, a stretchable self-powered neurologically integrated artificial tactile pathway is constructed using TENG and s-VST, which successfully conducts touch wireless communication and sensory skin touch-interaction. This work provides critical guidelines for the development of high performance stretchable electronic devices and a new platform for enabling neurological functions in stretchable electronics.

Keyword:

Mechanical stability Self-powered artificial tactile pathway Stretchable organic transistors Triboelectric nanogenerator Vertical organic field effect transistors&nbsp (VOFETs)

Community:

  • [ 1 ] [Wang, Xiumei]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 2 ] [Li, Enlong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 3 ] [Liu, Yaqian]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 4 ] [Yang, Huihuang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 5 ] [Yan, Yujie]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 6 ] [Shan, Liuting]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 7 ] [Lin, Zhixian]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 8 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 10 ] [Wang, Xiumei]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 11 ] [Li, Enlong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 12 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 13 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 14 ] [Lan, Shuqiong]Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
  • [ 15 ] [Lin, Zhixian]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362200, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

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Source :

NANO ENERGY

ISSN: 2211-2855

Year: 2021

Volume: 90

1 9 . 0 6 9

JCR@2021

1 6 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:142

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 39

SCOPUS Cited Count: 41

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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