This　work　systematically　investigated　the　magnetoresistance　switching　behavior　and　back-hopping　mechanisms　of　p-MTJs　at　high　temperatures　(up　to　360　K).　Experimental　results　show　that　the　TMR　ratio　and　the　switching　voltage　(VC)　of　p-MTJs　decrease　with　increasing　temperature　due　to　reduced　magnetic　anisotropy.　The　back-hopping　phenomenon,　characterized　by　random　resistance　state　fluctuations,　occurs　with　increasing　pulse　voltage.　Systematic　analysis　reveals　that　back-hopping　results　from　weakening　antiferromagnetic　coupling　under　high-voltage　pulse　excitation,　leading　to　flipping　of　the　reference　layer.　As　temperature　rises,　the　switching　voltage　associated　with　back-hopping　decreases.　©　2025　IEEE.