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author:

Zhou, Shengchao (Zhou, Shengchao.) [1] | Wang, Yifan (Wang, Yifan.) [2] | Meng, Hongrui (Meng, Hongrui.) [3] | Wu, Yajun (Wu, Yajun.) [4] | Ma, Zizhao (Ma, Zizhao.) [5] | Zou, Teng (Zou, Teng.) [6] | Min, Tai (Min, Tai.) [7] | Wang, Shaohao (Wang, Shaohao.) [8] (Scholars:王少昊) | Xie, Yufeng (Xie, Yufeng.) [9]

Indexed by:

SCIE

Abstract:

Recently, memory-augmented neural networks (MANNs) have gained significant attention as a critical solution for few-shot learning (FSL). These networks leverage external memory to store prior knowledge, thereby enhancing classification efficiency. Spin-transfer torque magnetic random access memory (STT-MRAM) is particularly suited for this application due to its compact cell size, excellent data retention, and scalability. In this article, we introduce a STT-MRAM-based near-memory computing (NMC) macro specifically designed for MANNs. Our approach incorporates several key innovations aimed at overcoming challenges in hardware implementation while improving MANN performance as follows: 1) a parallel computing architecture within the NMC to expedite L1 distance computations; 2) a memory invert coding (MIC) and self-termination write (STW) scheme that reduce write operations and energy consumption, addressing the issues of frequent writes and high write currents during the training phase of MANNs; 3) a dynamic offset-compensation sense amplifier (DOC-SA) and high-throughput switch-capacitor (HTSC) readout scheme to improve read accuracy and throughput, tackling low read margins and limited readout bandwidth; 4) an exploration of MANN architectures validates the reusability of the NMC macro. The optimized matching-networks (MCHnets)-based structure achieves an accuracy exceeding 90% in five-way and eight-way Omniglot classification tasks. Fabricated with a 40-nm CMOS technology, our design achieves classification accuracies of 96.37% for eight-way-five-shot tasks and 93.72% for 16-way-five-shot tasks on the Omniglot dataset utilizing the optimized MCHnet, showcasing an impressive energy efficiency of 6.47 TOPS/W at the basis of 16-bit L1 distance computing in the classification tasks of MANN.

Keyword:

Accuracy Computer architecture Few-shot learning (FSL) Magnetic tunneling memory-augmented neural network (MANN) near-memory computing (NMC) Random access memory Resistance spin-transfer torque magnetic random access memory (STT-MRAM) Switches Throughput Torque Training Vectors

Community:

  • [ 1 ] [Zhou, Shengchao]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 2 ] [Wang, Yifan]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 3 ] [Meng, Hongrui]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 4 ] [Wu, Yajun]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 5 ] [Ma, Zizhao]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 6 ] [Zou, Teng]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 7 ] [Xie, Yufeng]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
  • [ 8 ] [Min, Tai]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, Xian 710049, Peoples R China
  • [ 9 ] [Wang, Shaohao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • [Xie, Yufeng]Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China

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Source :

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

ISSN: 1063-8210

Year: 2025

2 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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